# Gate Edge Capacitance

The gate has plate capacitance to substrate/well and edge capacitance to drain/source diffusion. Numerically,

         Cg = 3 fF/tile
         Cd = 3
        Cgd = 1

The charge on the drain is

         Qd = Vd Cd + (Vd-Vg)Cgd
         Vd(Cd+Cgd) = Qd + Vg Cgd

Likewise

         Vg(Cg+Cgd) = Qg + Vd Cgd

Thus, edge capacitance is added to both gate and drain nets. Charge is modified by the other voltage. If the source is a power bus, its capacitance is added to the gate, but its charge is ignored.

Edge capacitors with the same gate and drain are combined. This happens with the n- and p- transistors of an inverter.

While the gate of a transistor is rising, its drain is pulled up, offsetting the drain current. When the gate stabilizes, the full current is realized. This shortens the rise/fall time of a transition. As the drain falls, it pulls the gate down. This is called Miller effect.

If the output of an inverter has 30 fF, edge capacitance is 3, or 10%. As the gate swings 5 V, the drain experiences a .5 V variance due to this effect.